? semiconductor components industries, llc, 2012 december, 2012 ? rev. 0 1 publication order number: ngtg30n60fw/d NGTG30N60FWG igbt this insulated gate bipolar transistor (igbt) features a robust and cost effective trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. features ? optimized for very low v cesat ? low switching loss reduces system power dissipation ? 5 s short ? circuit capability ? these are pb ? free devices typical applications ? power factor correction absolute maximum ratings rating symbol value unit collector ? emitter voltage v ces 600 v collector current @ t c = 25 c @ t c = 100 c i c 60 30 a pulsed collector current, t pulse limited by t jmax i cm 120 a short ? circuit withstand time v ge = 15 v, v ce = 300 v, t j +150 c t sc 5 s gate ? emitter voltage transient gate emitter voltage (t p = 5 s, d < 0.010) v ge 20 30 v power dissipation @ t c = 25 c @ t c = 100 c p d 167 67 w operating junction temperature range t j ? 55 to +150 c storage temperature range t stg ? 55 to +150 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 247 case 340l style 4 c g 30 a, 600 v v cesat = 1.5 v e device package shipping ordering information NGTG30N60FWG to ? 247 (pb ? free) 30 units / rail http://onsemi.com a = assembly location y = year ww = work week g = pb ? free package marking diagram g30n60f aywwg g e c
NGTG30N60FWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction ? to ? case, for igbt r jc 0.75 c/w thermal resistance junction ? to ? ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 500 a v (br)ces 600 ? ? v collector ? emitter saturation voltage v ge = 15 v, i c = 30 a v ge = 15 v, i c = 30 a, t j = 150 c v cesat 1.25 ? 1.45 1.75 1.70 ? v gate ? emitter threshold voltage v ge = v ce , i c = 200 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 600 v v ge = 0 v, v ce = 600 v, t j = 150 c i ces ? ? ? ? 0.2 2 ma gate leakage current, collector ? emitter short ? circuited v ge = 20 v , v ce = 0 v i ges ? ? 100 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 4100 ? pf output capacitance c oes ? 115 ? reverse transfer capacitance c res ? 95 ? gate charge total v ce = 480 v, i c = 30 a, v ge = 15 v q g 170 nc gate to emitter charge q ge 34 gate to collector charge q gc 83 switching characteristic, inductive load turn ? on delay time t j = 25 c v cc = 400 v, i c = 30 a r g = 10 v ge = 0 v/ 15 v* t d(on) 81 ns rise time t r 31 turn ? off delay time t d(off) 190 fall time t f 110 turn ? on switching loss e on 0.65 mj turn ? off switching loss e off 0.65 total switching loss e ts 1.30 turn ? on delay time t j = 150 c v cc = 400 v, i c = 30 a r g = 10 v ge = 0 v/ 15 v* t d(on) 80 ns rise time t r 32 turn ? off delay time t d(off) 200 fall time t f 230 turn ? on switching loss e on 0.80 mj turn ? off switching loss e off 1.1 total switching loss e ts 1.90 *includes diode reverse recovery loss using ngtb30n60fwg.
NGTG30N60FWG http://onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 5 4 3 2 1 0 180 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector ? emitter voltage (v) v ge , gate ? emitter voltage (v) 12 8 4 0 figure 5. v ce(sat) vs. t j figure 6. typical capacitance t j , junction temperature ( c) v ce , collector ? emitter voltage (v) ? 75 0 0.5 1.0 80 40 20 0 10 100 1000 i c , collector current (a) i c , collector current (a) v ce , collector ? emitter voltage (v) capacitance (pf) v ge = 17 v to 13 v t j = 25 c 11 v 10 v 8 v 7 v i c , collector current (a) v ge = 17 v to 13 v t j = 150 c 10 v 9 v 8 v 7 v i c , collector current (a) t j = ? 55 c 10 v 9 v 7 v to 8 v t j = 25 c t j = 150 c 10,000 1.5 2.0 2.5 i c = 60 a i c = 30 a i c = 15 a i c = 5 a 60 100 c ies c oes c res 3.0 8 7 6 9 v 5 4 3 2 1 08 7 6 11 v 200 5 4 3 2 1 0 180 8 7 6 v ge = 17 v to 13 v 11 v 160 140 120 100 80 60 40 20 0 16 ? 25 25 75 125 175 160 140 120 100 80 60 40 20 0 180 160 140 120 100 80 60 40 20 0 160 140 120 100 80 60 40 20 0
NGTG30N60FWG http://onsemi.com 4 typical characteristics figure 7. typical gate charge q g , gate charge (nc) figure 8. switching loss vs. temperature figure 9. switching time vs. temperature t j , junction temperature ( c) t j , junction temperature ( c) 140 120 100 80 60 40 20 0 1.2 0 1000 figure 10. switching loss vs. i c figure 11. switching time vs. i c i c , collector current (a) i c , collector current (a) 8 2.1 1000 v ge , gate ? emitter voltage (v) switching loss (mj) switching time (ns) switching loss (mj) switching time (ns) 160 v ce = 400 v v ge = 15 v i c = 30 a rg = 10 v ce = 400 v v ge = 15 v t j = 150 c rg = 10 20 15 10 5 0 0 100 10 1 20 40 60 80 100 120 140 160 16 24 32 40 48 100 10 1 v ce = 480 v e on e off t f t d(on) t r t d(off) v ce = 400 v v ge = 15 v i c = 30 a rg = 10 e on e off t f t d(on) t r t d(off) v ce = 400 v v ge = 15 v t j = 150 c rg = 10 50 100 150 200 56 64 25 75 125 175 1 0.8 0.6 0.4 0.2 0 1.8 1.5 1.2 0.9 0.6 0.3 0 816243240485664
NGTG30N60FWG http://onsemi.com 5 typical characteristics figure 12. switching loss vs. rg figure 13. switching time vs. rg rg, gate resistor ( ) rg, gate resistor ( ) 75 65 55 45 35 25 15 5 3 75 65 55 45 35 25 15 5 figure 14. switching loss vs. v ce figure 15. switching time vs. v ce v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 525 475 425 375 325 275 225 175 1.8 1 10 100 1000 figure 16. safe operating area v ce , collector ? emitter voltage (v) 1000 100 10 1 0.01 10 100 1000 switching loss (mj) switching time (ns) switching loss (mj) switching time (ns) i c , collector current (a) 85 v ce = 400 v v ge = 15 v i c = 30 a t j = 150 c 85 v ce = 400 v v ge = 15 v i c = 30 a t j = 150 c 575 v ge = 15 v i c = 30 a rg = 10 t j = 150 c single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature 1000 100 10 1 e on e off t f t d(on) t r t d(off) figure 17. reverse bias safe operating area v ce , collector ? emitter voltage (v) 1000 100 10 1 1 10 100 1000 i c , collector current (a) v ge = 15 v, t c = 125 c e on e off v ge = 15 v i c = 30 a rg = 10 t j = 150 c t f t d(on) t r t d(off) 1 0.1 dc operation 1 ms 50 s 100 s 525 475 425 375 325 275 225 175 575 2.5 2 1.5 1 0.5 0 1.5 1.2 0.9 0.6 0.3 0
NGTG30N60FWG http://onsemi.com 6 typical characteristics 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 0.75 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.0e ? 4 6.84e ? 5 0.002 0.03 0.1 r i ( c/w) 0.03276 0.07477 0.12790 0.17518 0.22911 figure 18. igbt transient thermal impedance r(t) ( c/w) pulse time (sec) 2.0 0.11135 figure 19. test circuit for switching characteristics
NGTG30N60FWG http://onsemi.com 7 figure 20. definition of turn on waveform
NGTG30N60FWG http://onsemi.com 8 figure 21. definition of turn off waveform
NGTG30N60FWG http://onsemi.com 9 package dimensions to ? 247 case 340l ? 02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 4: pin 1. gate 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtg30n60fw/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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